Structure, photovoltaic properties, and angle-of-incidence correlations of electron-beam-deposited SnO2/n-Si solar cells

Publisher Website
Google Scholar
Abstract
The effects of the angle of incidence on the structural and photovoltaic properties of electron‐beam‐deposited SnO2/n‐Si solar cells have been studied in detail. X‐ray diffraction analyses of SnO2 films deposited on silicon indicate the presence of multiple phases of tin oxide. A correlation is observed between the angle of incidence and x‐ray diffraction pattern. The angular dependences of the short‐circuit photocurrent, open‐circuit photovoltage, fill factor, conductivity, and efficiency were similar. A model is proposed to explain the observed photovoltaic parameter versus angle of incidence results. In this model, the carrier ’’transmission’’ or tunneling probability across the interfacial SiO2 layer is assumed to be a function of the crystallite orientation and phases of the tin oxide.