Transient enhanced diffusion during post-implant annealing of silicon
- 1 August 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (8) , 1535-1542
- https://doi.org/10.1088/0268-1242/9/8/016
Abstract
A method for calculating diffusion enhancement due to dopant-defect pairing in ion-implanted silicon is described. The number of dopant-defect pairs is calculated from a general defect clustering model. The assumption that a net dopant flux arises from dopant-defect pair gradients leads to the calculation of an initial enhanced diffusion coefficient. This diffusion enhancement is shown to be consistent with measured transient diffusion.Keywords
This publication has 8 references indexed in Scilit:
- Implantation damage and its effect on channellingMicroelectronics Journal, 1993
- Distribution of damage clusters in ion-implanted siliconSemiconductor Science and Technology, 1993
- Role of point defects in the transient diffusion and clustering of implanted boron in siliconMaterials Science and Engineering: B, 1989
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- General model for intrinsic dopant diffusion in silicon under nonequilibrium point-defect conditionsJournal of Applied Physics, 1988
- Rapid annealing and the anomalous diffusion of ion implanted boron into siliconApplied Physics Letters, 1987
- Transient enhanced diffusion during rapid thermal annealing of boron implanted siliconApplied Physics Letters, 1985
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977