Electron-Beam Recrystallization of Silicon Layers on Silicon Dioxide
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Measurement of local stress in laser-recrystallized lateral epitaxial silicon films over silicon dioxide using Raman scatteringApplied Physics Letters, 1983
- Effect of pressure differential on channeling in thin Si crystalsApplied Physics Letters, 1983
- Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAsJapanese Journal of Applied Physics, 1983
- Single Crystal Silicon Films on Amorphous Insulators: Growth by Lateral Nucleated Epitaxy Using Scanning Laser and Electron Beams and Evaluation by Electron Backscattering ContrastJournal of the Electrochemical Society, 1982
- Stripe Shaped Crystal Growth and Its Model of Silicon Films on Silicon Nitride Layer by Scanning Electron Beam AnnealingJapanese Journal of Applied Physics, 1982
- A line-source electron beam annealing systemJournal of Applied Physics, 1982
- Grain growth of polycrystalline silicon films on SiO2 by cw scanning electron beam annealingApplied Physics Letters, 1981
- Seeded and limited seeding regrowth of Si over SiO2 by cw laser annealingApplied Physics Letters, 1981
- High speed scanning electron beam annealing of ion-implanted silicon layersThin Solid Films, 1980
- Si Bridging Epitaxy from Si Windows onto SiO2byQ-Switched Ruby Laser Pulse AnnealingJapanese Journal of Applied Physics, 1980