Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition
- 31 August 2003
- journal article
- Published by Elsevier in Optical Materials
- Vol. 23 (1-2) , 187-195
- https://doi.org/10.1016/s0925-3467(03)00082-x
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Indium–silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectorsApplied Physics Letters, 2001
- High-performance back-illuminated solar-blind AlGaNmetal-semiconductor-metal photodetectorsElectronics Letters, 2000
- Back illuminated AlGaN solar-blind photodetectorsApplied Physics Letters, 2000
- Realization of crack-free and high-quality thick Al Ga1−N for UV optoelectronics using low-temperature interlayerApplied Surface Science, 2000
- Solar-Blind AlGaN Heterostructure PhotodiodesMRS Internet Journal of Nitride Semiconductor Research, 2000
- Evidence for localized Si-donor state and its metastable properties in AlGaNApplied Physics Letters, 1999
- Doping of AlGaN AlloysMRS Internet Journal of Nitride Semiconductor Research, 1999
- Properties of Si donors and persistent photoconductivity in AlGaNSolid-State Electronics, 1998
- Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) SubstratesMRS Internet Journal of Nitride Semiconductor Research, 1996
- Energy band-gap bowing parameter in an AlxGa1−x N alloyJournal of Applied Physics, 1987