Growth Kinetics of Microscopic Silicon Rods Grown on Silicon Substrates by the Pyrolytic Laser-Induced Chemical Vapor Deposition Process

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Abstract
By using a cw Ar+ ion laser beam, microscopic crystalline silicon rods ≈102 µm in diameter and ≈103 µm in height have been grown on a silicon substrate by pyrolytic dissociation of SiH4. The kinetics of lateral growth of the silicon rods is derived from the time integration of the Arrhenius equation using a reasonable assumption that the temperature on the edge of the deposit saturates inversely to the substrate temperature with illumination time. For the axial growth, excluding the initial transient growth, the same result as Bäuerle and his collaborators is derived. The influences of laser power and illumination time on the deposited diameter and height are found experimentally, and it is found that the derived theory agrees well with the experimental results.