Double-junction effect in proton-irradiated silicon diodes
- 15 August 2002
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 92 (4) , 2013-2016
- https://doi.org/10.1063/1.1495077
Abstract
This article concerns the existence of a double-junction effect in proton-irradiated silicon p+-ν-n+ (pin) diodes demonstrated by surface potential and optical-beam-induced current (OBIC) investigations. By increasing the diode biasing, the junctions existing at both ends in the irradiated devices move towards each other up to join, hence, causing a full depletion of the diodes. Due to the inhomogeneity of the electric field, however, the charge-carrier collection is strongly dependent on the position. The extent of the diode depletion layers at both ends and the shape of the electric field within the p+-ν-n+ diodes are determined as a function of the bias applied. Three-dimensional photocurrent maps obtained by OBIC profiles allow for imaging the double junction. The deep level analysis evidences the presence of irradiation-induced defects, which are responsible for the double-junction effect.This publication has 17 references indexed in Scilit:
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