Layer thickness calculations for silicon-on-insulator structures formed by oxygen implantation
- 17 September 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (12) , 1200-1202
- https://doi.org/10.1063/1.104227
Abstract
A new computer program enables the evolution of oxygen distributions in separation by implanted oxygen (SIMOX) substrates to be simulated during implantation and also after high-temperature annealing. The positions of the Si/SiO2 interfaces have been calculated for implantation energies of 150 and 200 keV. Theoretical results are in good agreement with experimental data over a wide range of fluences. It is found that the use of multiple implantation and annealing cycles, in comparison with a single implantation stage, shifts the buried oxide layer towards the surface.Keywords
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