Determination of diffusion length of electron beam induced minority carriers in polycrystalline GaAs
- 1 June 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (11) , 958-960
- https://doi.org/10.1063/1.93813
Abstract
A method of combining Schottky barrier electron beam induced current imaging of grain clusters with quantitative determination of diffusion length is demonstrated. This was achieved by comparing the measured number of collected carriers per incident electron, corrected for backscattered, and secondary electrons to a calculated value. A source function compensated for metal thickness was used. Diffusion lengths were measured in GaAs samples and ranged from 0.2 μm for polycrystalline and bulk single crystal material to 7.5 μm for chemical vapor deposition grown layers. These values were independently verified through a comparison with quantum efficiency data.Keywords
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