Ion implantation of sputtered Y-Ba-Cu-O films

Abstract
Thin films of Y-Ba-Cu-O were deposited by rf magnetron sputtering from a single stoichiometric target and then altered in composition by ion implantation. Under optimum deposition conditions the films are deficient in Ba and Cu. Ion implantation of Cu was performed using a metal-vapor vacuum-arc source having high current and a broad energy spectrum for good depth distribution. Composition was determined by Rutherford backscattering spectrometry. The zero-resistance temperature was greatly increased after implantation and reannealing. This method could be used to write superconducting patterns on insulating material.