Cryogenic indium-phosphide HEMT low-noise amplifiers at V-band
- 1 July 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 48 (7) , 1283-1286
- https://doi.org/10.1109/22.853474
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Cryogenic investigation of gate leakage and RF performances down to 50 K of 0.2 μm AlInAs/GaInAs/InP HEMTsElectronics Letters, 1993
- Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependenceIEEE Transactions on Microwave Theory and Techniques, 1989
- Ultra-low-noise cryogenic high-electron-mobility transistorsIEEE Transactions on Electron Devices, 1988