Catalytic chemical vapor deposition method to prepare high quality hydro-fluorinated amorphous silicon
- 1 December 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (11) , 6505-6509
- https://doi.org/10.1063/1.342069
Abstract
A new type of chemical vapor deposition method, named ‘‘Catalytic‐CVD’’ method, is presented. In the method, deposition gases are decomposed by catalytic or pyrolytic reaction between deposition gases and a heated catalyzer, and films are thermally grown on a substrate at temperatures lower than 300 °C without any help from glow discharge plasma. Hydro‐fluorinated amorphous silicon (a‐Si:F:H) films are deposited by this method using both a SiF2 and H2 gas mixture and a SiH2F2 and H2 mixture. It is found that a very high quality a‐Si:F:H film can be obtained, and for instance, that the photosensitivity for AM‐1 of 100 mW/cm2 exceeds 106 and the spin density is as low as 6×1015 cm−3.This publication has 11 references indexed in Scilit:
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