Structural and electrical properties of InSb epitaxial films grown on GaAs by low-pressure MOCVD
- 1 November 1993
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 88 (6) , 447-450
- https://doi.org/10.1016/0038-1098(93)90611-p
Abstract
No abstract availableKeywords
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