Pt-Ni bilayers on n-type silicon: Metallurgical and electrical behavior

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Abstract
Silicide formation in the Ni‐Pt‐Si system has been investigated mainly by megaelectronvolt backscattering spectrometry, glancing‐angle x‐ray diffraction, and Auger electron spectroscopy as a function of heat treatment (200–850 °C). Schottky‐barrier values have been used to identify the kinds of metals present at the silicide/silicon interface. Pt/Ni/Si and Ni/Pt/Si structures have been prepared by e‐gun deposition of thin Pt and Ni films on 〈100〉 n‐type silicon single crystals. The reaction starts by forming the silicide, Ni2Si or Pt2Si, of the metal in contact with silicon and proceeds until all the inner‐metal film has reacted. At about 300 °C for 30 min the outer metal starts to diffuse through the already formed silicide and builds up at the silicon surface. Further annealing enhances the reaction and there is evidence also of silicon diffusion towards the outside layer. At 400 °C for 30 min and in both structures, NiSi starts to form and pushes out the Pt from the silicon surface. The conversion of Ni2Si into NiSi provides the driving force for <named-content xmlns:mml="http://www.w3.org/1998/Math/MathML"...