Analysis of low-pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry
- 1 November 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (9) , 844-846
- https://doi.org/10.1063/1.93714
Abstract
Rutherford backscattering spectrometry channeling was found effective in composition and impurity analysis of silicon nitride films, and conditions to deposit stoichiometric Si3N4 by low‐pressure chemical vapor deposition are obtained. The as‐determined N/Si ratio is not correlated with the measured refractive index, and a possible interpretation is discussed. Also, the inhomogeneity problem of the nitride films is examined.Keywords
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