High quality GaAs and GaP on Si with III–V alloy SLS buffer layers
- 1 November 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (1-2) , 188-194
- https://doi.org/10.1016/0022-0248(89)90198-x
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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