Room-temperature measurements of strong electroabsorption effect in GexSi1−x/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition
- 19 April 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (16) , 1976-1978
- https://doi.org/10.1063/1.109508
Abstract
We have used photocurrent measurements to demonstrate a strong electroabsorption effect in GexSi1−x/Si multiple quantum wells grown by remote plasma‐enhanced chemical vapor deposition. Large voltage‐induced shifts in absorption are observed at room temperature in the wavelength range from 1.2 to 1.58 μm. We anticipate that the results can be extended to fabricate GexSi1−x optoelectronic devices operating at room temperature.Keywords
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