Control of surface charging during high current ion implantation
- 1 February 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 37-38, 555-558
- https://doi.org/10.1016/0168-583x(89)90245-0
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Time-dependent dielectric breakdown of ultra-thin silicon oxideIEEE Electron Device Letters, 1987
- A study of wafer and device charging during high current ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Charging studies in applied materials precision implant 9000 systemNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Secondary Electron Emission during Ion ImplantationJournal of the Electrochemical Society, 1986
- Kinetics of charge trapping in dielectricsJournal of Applied Physics, 1985
- Wafer charging and beam interactions in ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Ion implantation electron flooding requirements from a user's perspectiveNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Effect of resist patterning on gate oxide integrity in source/drain implantNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Experimental Determination of Current Paths of Ions Implanted into InsulatorsJapanese Journal of Applied Physics, 1976
- Charging of insulators by ion bombardment and its minimization for secondary ion mass spectrometry (SIMS) measurementsJournal of Applied Physics, 1976