Diffusion barrier study on TaSix and TaSixNy
- 25 November 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 235 (1-2) , 169-174
- https://doi.org/10.1016/0040-6090(93)90261-m
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Diffusion barrier performance of pulsed laser deposited amorphous tungsten carbide filmsJournal of Applied Physics, 1991
- Auger electron spectroscopy and Rutherford backscattering characterization of TiNx/TiSiy contact barrier metallizationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Electrical degradation of Al/TiW/CoSi2 shallow junctionsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Tungsten silicide barrier layers in aluminium ohmic contact systemsThin Solid Films, 1989
- Tantalum nitride as a diffusion barrier between Pd2Si or CoSi2 and aluminumJournal of Applied Physics, 1989
- WxN1−x alloys as diffusion barriers between Al and SiJournal of Applied Physics, 1988
- Cosputtered W75C25 thin film diffusion barriersThin Solid Films, 1988
- A TaSix barrier for low resistivity and high reliability of contacts to shallow diffusion regions in siliconThin Solid Films, 1984
- Resistivity, oxidation kinetics and diffusion barrier properties of thin film ZrB2Thin Solid Films, 1984
- Barrier layers: Principles and applications in microelectronicsJournal of Vacuum Science & Technology A, 1984