A mechanistic study of SF6 reactive ion etching of tungsten
- 1 September 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 176 (2) , 289-308
- https://doi.org/10.1016/0040-6090(89)90102-8
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Competitive reactions of fluorine and oxygen with W, WSi2, and Si surfaces in reactive ion etching using CF4/O2Journal of Vacuum Science & Technology A, 1989
- Real space transfer: Generalized approach to transport in confined geometriesSolid-State Electronics, 1988
- Plasma-assisted etching of tungsten films: A quartz-crystal microbalance studyJournal of Applied Physics, 1988
- Role of sulfur atoms in microwave plasma etching of siliconJournal of Applied Physics, 1987
- Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction productsPlasma Chemistry and Plasma Processing, 1985
- Reactive Ion Etching of Tungsten Films Sputter Deposited on GaAsJournal of the Electrochemical Society, 1985
- Plasma Etching of Refractory Gates for VLSI ApplicationsJournal of the Electrochemical Society, 1984
- Tungsten Etching in CF 4 and SF 6 DischargesJournal of the Electrochemical Society, 1984
- High-resolution pattern definition in tungstenApplied Physics Letters, 1981
- Plasma etching of Si and SiO2 in SF6–O2 mixturesJournal of Applied Physics, 1981