The influence of the chlorine-hydrogen ratio in the gas phase on the stability of the {113} faces of silicon in Si-H-Cl CVD
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 102 (1-2) , 233-244
- https://doi.org/10.1016/0022-0248(90)90906-2
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Influence of temperature on the crystal habit of silicon in the SiHCl CVD system I. Experimental resultsJournal of Crystal Growth, 1989
- Influence of temperature on the crystal habit of silicon in the SiHCl CVD system II. Surface tension of faces in the 〈110〉 zonesJournal of Crystal Growth, 1989
- Thermodynamic Equilibria in the Si‐H‐Cl and Si‐H‐Br SystemsJournal of the Electrochemical Society, 1988
- Epitaxial Growth of Silicon by CVD in a Hot‐Wall FurnaceJournal of the Electrochemical Society, 1985
- Growth rate anisotropy and morphology of autoepitaxial silicon films from SiCl4Journal of Crystal Growth, 1974
- High Temperature Reactions in the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1974
- Étude de l'anisotropie de la croissance épitaxiale de GaAs en phase vapeurJournal of Crystal Growth, 1972
- Layer growth in silicon epitaxyJournal of Crystal Growth, 1972
- A Thorough Thermodynamic Evaluation of the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1972
- Some Theorems on the Free Energies of Crystal SurfacesPhysical Review B, 1951