Molecular beam epitaxy: An emerging epitaxy technology
- 11 September 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 83 (2) , 125-141
- https://doi.org/10.1016/0040-6090(81)90659-3
Abstract
No abstract availableKeywords
This publication has 84 references indexed in Scilit:
- Extremely high electron mobilities in modulation-doped GaAs-Al
x
Ga
1−
x
As heterojunction superlatticesElectronics Letters, 1981
- Development of self-pulsations due to self-annealing of proton bombarded regions during aging in proton bombarded stripe-geometry AlGaAs DH lasers grown by molecular beam epitaxyIEEE Journal of Quantum Electronics, 1980
- Design considerations for molecular beam epitaxy systemsProgress in Crystal Growth and Characterization, 1979
- Observation of semiconductor-semimetal transition in InAs-GaSb superlatticesApplied Physics Letters, 1979
- Low-noise microwave f.e.t.s fabricated by molecular-beam epitaxyElectronics Letters, 1979
- Cryogenic Millimeter-Wave Receiver Using Molecular Beam Epitaxy DiodesIEEE Transactions on Microwave Theory and Techniques, 1978
- High-power GaAs f.e.t. prepared by molecular-beam epitaxyElectronics Letters, 1978
-
p
+
–n
hyperabrupt GaAs varactors grown by molecular-beam epitaxyElectronics Letters, 1978
- Room-temperature operation of lattice-matched InP/Ga0.47In0.53As/InP double-heterostructure lasers grown by MBEApplied Physics Letters, 1978
- Observation of confined propagation in Bragg waveguidesApplied Physics Letters, 1977