Structural and electrical properties of furnace and rapid thermally annealed LPCVD WSi/sub 2/ films on single-crystal, polycrystalline, and amorphous silicon substrates

This publication has 9 references indexed in Scilit:

• Effect of arsenic implantation on electrical characteristics of LPCVD WSi/sub 2//n-Si Schottky contacts
  IEEE Transactions on Electron Devices, 1991
• Novel refractory contact and interconnect metallizations for high-voltage and smart-power applications
  IEEE Transactions on Electron Devices, 1990
• Blanket LVD tungsten silicide technology for smart power applications
  IEEE Electron Device Letters, 1989
• The Effect of Doping on the Grain Structure of As-Deposited and High-Temperature Annealed Lpcvd Wsl2 Films on Polysilicon
  MRS Proceedings, 1988
• On the Adhesion of LPCVD WSi2 to Doped and Undoped Polysilicon
  MRS Proceedings, 1988
• Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnections
  IEEE Transactions on Electron Devices, 1983
• Composite silicide gate electrodes—Interconnections for VLSI device technologies
  IEEE Transactions on Electron Devices, 1980
• Properties of Sputtered Tungsten Silicide for MOS Integrated Circuit Applications
  Journal of the Electrochemical Society, 1980
• 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspective
  IEEE Transactions on Electron Devices, 1979