Effect of arsenic implantation on electrical characteristics of LPCVD WSi/sub 2//n-Si Schottky contacts
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (9) , 2033-2035
- https://doi.org/10.1109/16.83726
Abstract
No abstract availableKeywords
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