Formation of silicided, ultra-shallow junctions using low thermal budget processing
- 1 January 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (1) , 67-88
- https://doi.org/10.1007/bf02655553
Abstract
No abstract availableKeywords
This publication has 99 references indexed in Scilit:
- Characterisation of Ion Implanted and Thin Epitaxial Layer Structures Using PhotoluminescenceMRS Proceedings, 1988
- Interfacial Reactions of Titanium Thin Films on P+-Implanted (001)SiMRS Proceedings, 1988
- Shallow Junctions Formed by the Thermal Redistribution of Implanted Arsenic into TiSi2MRS Proceedings, 1988
- As redistribution during Ti silicide formationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Shallow Junction Formation by the Redistribution of Species Implanted into Cobalt SilicideMRS Proceedings, 1987
- Effects of arsenic ion irradiation on Ti silicide formationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Characterization of Doped Si-TiSi2Bilayers Formed by Ion Beam Mixing and Rapid Thermal AnnealingMRS Proceedings, 1985
- Dopant Redistribution During Silicide FormationMRS Proceedings, 1985
- High-Quality Boron and BF2+-Implanted P+ Junctions in Si Using Solid Phase Epitaxy and Transient AnnealingMRS Proceedings, 1984
- Rapid Thermal Annealing of Pre-Amorphized B and BF2-Implanted SiliconMRS Proceedings, 1984