Long-term operation of planar InGaAs/InP p-i-n photodiodes
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2349-2354
- https://doi.org/10.1109/16.8813
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Reliability of planar InGaAs/InP photodiodes passivated with boro-phospho-silicate glassJournal of Applied Physics, 1988
- Reliability of InGaAs/InP long-wavelength p-i-n photodiodes passivated with polyimide thin filmJournal of Lightwave Technology, 1986
- Large-hole diffusion length and lifetime in InGaAs/InP double-heterostructure photodiodesElectronics Letters, 1986
- First life-test results on planar p-i-n InGaAs/InP photodiodes passivated with SiO2or SiNx+SiO2or SiNxlayersIEEE Electron Device Letters, 1985
- Reliability of InGaAs Photodiodes for SL ApplicationsAT&T Technical Journal, 1985
- High-temperature aging tests on planar structure InGaAs/InP PIN photodiodes with Ti/Pt and Ti/Au contactElectronics Letters, 1984
- Failure mode analysis of planar zinc-diffused In0.53Ga0.47As p-i-n photodiodesJournal of Applied Physics, 1984
- Large-area and visible response VPE InGaAs photodiodesIEEE Transactions on Electron Devices, 1983
- A comprehensive review of the lognormal failure distribution with application to LED reliabilityMicroelectronics Reliability, 1978
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962