Substitutional site control of Si in GaAs by stoichiometry change with Ga ion implantation
- 1 February 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 37-38, 308-311
- https://doi.org/10.1016/0168-583x(89)90192-4
Abstract
No abstract availableKeywords
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