Dual implantation of Ga and Ge into GaAs
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (11) , 5781-5784
- https://doi.org/10.1063/1.327533
Abstract
The electrical properties of GaAs, doubly implanted with Ge+Ga, have been studied by the van der Pauw–Hall‐effect/sheet‐resistivity technique. In all cases both species of the dual implants were implanted sequentially at the same ion energy of 120 keV and at the same dose, with doses ranging from 1×1013 to 3×1015 cm−2. Implanted samples were annealed with pyrolytic Si3N4 encapsulants at temperatures ranging from 700 to 1000 °C. The addition for Ga ion implants to GaAs:Ge produces p‐type conductivity for all doses up to an anneal temperature of 900 °C. The p‐type electrical activity of Ge in GaAs:Ge+Ga was found to increase significantly over that of GaAs:Ge for doses of 3×1014 cm−2 or below, while the original n‐type activity of Ge single implants was found to change to p type for doses of 1×1015 cm−2 or above, except for anneal temperatures higher than 900 °C. The maximum electrical activation efficiency obtained with the dual implantation was 61% at a dose of 1×1013 cm−2 and an anneal temperature of 950 C.This publication has 8 references indexed in Scilit:
- Ohmic contacts in GaAsSolid-State Electronics, 1980
- Amphoteric behavior of Ge implants in GaAsApplied Physics Letters, 1979
- Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxyApplied Physics A, 1979
- Dual implantation of C and Ga ions into GaAsJournal of Applied Physics, 1978
- Enhancement of the donor activity of implanted selenium in GaAs by gallium implantationApplied Physics Letters, 1976
- Effect of dual implants into GaAsElectronics Letters, 1975
- Measurement of High Resistivity Semiconductors Using the van der Pauw MethodReview of Scientific Instruments, 1973
- Ion implantation in compound semiconductors–an approach based on solid state theoryRadiation Effects, 1973