Photocurent spectroscopy in thin-film insulators: Voltage dependence of the external-circuit current
- 15 February 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 9 (4) , 1874-1883
- https://doi.org/10.1103/physrevb.9.1874
Abstract
An analytical model for trapping-state photodepopulation measurements in conductor-thin-film-insulator-conductor structures is presented. The external-circuit-current dependence on applied voltage is determined, and it is shown that moments of the spatial distribution of trapped charge in the insulator can be extracted from collected-charge versus applied-field characteristic curves. The photodepopulation technique is compared with more widely used differential-capacitance and phtoemission-current techniques.Keywords
This publication has 14 references indexed in Scilit:
- Limitations upon photoinjection studies of charge distributions close to interfaces in MOS capacitorsJournal of Applied Physics, 1973
- Effects of Postdeposition Annealing Treatments on Charge Trapping in CVD Al[sub 2]O[sub 3] Films on SiJournal of the Electrochemical Society, 1973
- Electronic charge trapping in chemical vapor-deposited thin films of Al2O3 on siliconJournal of Applied Physics, 1972
- Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate SiSolid-State Electronics, 1972
- Electron trapping levels in silicon dioxide thermally grown on siliconJournal of Physics and Chemistry of Solids, 1972
- Photoinjection Studies of Charge Distributions in Oxides of MOS StructuresJournal of Applied Physics, 1971
- METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURESApplied Physics Letters, 1971
- Spectrally resolved photo depopulation of electron trapping defects in amorphous silica filmsSolid State Communications, 1970
- Photoemission of Electrons from Silicon and Gold into Silicon DioxidePhysical Review B, 1966
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965