Comparison of high resolution negative electron beam resists

Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000.1XP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by $100\mathrm{kV}$ electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic $\mathrm{S}{\mathrm{F}}_6∕{\mathrm{O}}_2∕\mathrm{C}\mathrm{H}{\mathrm{F}}_3$ based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2. $20\mathrm{nm}$ half-pitch lines and $10\mathrm{nm}$ lines with a pitch down to $60\mathrm{nm}$ are written and transferred into silicon.