SiO2 film growth by double-excitation photo-CVD using Si3H8 and O2
- 1 September 1988
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 33-34, 427-433
- https://doi.org/10.1016/0169-4332(88)90336-4
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Preparation of SiO2Film by Photo-Induced Chemical Vapor Deposition Using a Deuterium Lamp and Its Annealing EffectJapanese Journal of Applied Physics, 1987
- Low Temperature Growth of SiO2 Thin Film by Double-Excitation Photo-CVDJapanese Journal of Applied Physics, 1987
- Vacuum ultraviolet absorption cross sections of SiH4, GeH4, Si2H6, and Si3H8The Journal of Chemical Physics, 1986
- X-Ray Fluorescence Analysis of Hg in SiO2 Films Deposited by Hg-Sensitized Photo-CVDJapanese Journal of Applied Physics, 1986
- Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °CApplied Physics Letters, 1986
- Direct photochemical deposition of SiO2 from the Si2H6+O2 systemJournal of Applied Physics, 1984
- Photo-Induced Chemical Vapor Deposition of SiO2 Film Using Direct Excitation Process by Deuterium LampJapanese Journal of Applied Physics, 1984
- Photo-Chemical Vapor Deposition of Silicon Nitride Film by Direct PhotolysisJapanese Journal of Applied Physics, 1983
- Hydrogenated amorphous silicon growth by CO2 laser photodissociation of silaneJournal of Applied Physics, 1982
- Laser photodeposition of metal films with microscopic featuresApplied Physics Letters, 1979