Near band-edge luminescence studies of the effect of interfacial step distribution and alloy disorder in ultrathin GaAsAxGa1−xAs(100) single quantum wells grown by MBE under RHEED determined conditions
- 31 December 1987
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 3 (3) , 313-323
- https://doi.org/10.1016/0749-6036(87)90079-6
Abstract
No abstract availableKeywords
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