High sensitivity InP-based monolithically integrated pin-HEMT receiver-OEIC's for 10 Gb/s

This publication has 10 references indexed in Scilit:

• InP-based microelectronics pilot line for commercial and military applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Integrated high speed pin-diode grown by LP-MOVPE on selectively etched substrates
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Noise and small-signal performance of three differentmonolithic InP-based 10 Gbit/sphotoreceiver OEICs
  Electronics Letters, 1994
• De-embedding of on-wafer lightwave measurements performed on a monolithic 10 Gb/s InP receiver-oeic
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1993
• 13 Gbit/s Si bipolar preamplifier for optical front ends
  Electronics Letters, 1993
• A 10 Gb/s high sensitivity, monolithically integrated p-i-n-HEMT optical receiver
  IEEE Photonics Technology Letters, 1993
• Large gain-bandwidth-product, low dark-current InAlAs/lnAlGaAs quaternary-well superlattice avalanche photodiodes
  Published by Optica Publishing Group ,1993
• Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessing
  IEEE Electron Device Letters, 1992
• Bias dependence of the MODFET intrinsic model elements values at microwave frequencies
  IEEE Transactions on Electron Devices, 1989
• Monolithic pin HEMT receiver for long wavelength optical communications
  Electronics Letters, 1988