Atom Beam-Irradiation Effects on Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition
- 1 September 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (9A) , L1489
- https://doi.org/10.1143/jjap.28.l1489
Abstract
By exposure to an atom beam, polycrystal deposition on mask films (W and SiO2) was suppressed in the selective epitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD) under atmospheric pressure. While surface migration was enhanced on W surfaces, reevaporation was enhanced on SiO2 surfaces by atom beam irradiation. By optimizing growth conditions, selective epitaxial growth was realized without polycrystal deposition on stripe-shaped masks where the maximum width of the stripe was 40 µm for W masks and 150 µm for SiO2 masks.Keywords
This publication has 10 references indexed in Scilit:
- Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAsApplied Physics Letters, 1989
- 1/4-µm CMOS isolation technique using selective epitaxyIEEE Transactions on Electron Devices, 1987
- Reactive Atom-Beam Etching of GaAs.SHINKU, 1987
- Selectively buried epitaxial growth of GaAs by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Selective Embedded Growth of AlxGa1-xAs by Low-Pressure Organometallic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1986
- Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1985
- Selective area growth of gallium arsenide by metalorganic vapor phase epitaxyApplied Physics Letters, 1984
- Selective metalorganic chemical vapour deposition for GaAs planar technologyJournal of Crystal Growth, 1984
- GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applicationsIEEE Electron Device Letters, 1984
- Selective MOCVD epitaxy for optoelectronic devicesJournal of Crystal Growth, 1981