Cleaving oxide films using hydrogen implantation
- 29 June 2001
- journal article
- research article
- Published by Elsevier in Materials Letters
- Vol. 49 (6) , 313-317
- https://doi.org/10.1016/s0167-577x(00)00391-8
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Smart-Cut® process using metallic bonding:Application to transfer of Si, GaAs, InP thin filmsElectronics Letters, 1999
- Mechanism of silicon exfoliation induced by hydrogen/helium co-implantationApplied Physics Letters, 1998
- Efficient production of silicon-on-insulator films by co-implantation of He+ with H+Applied Physics Letters, 1998
- Si and SiC layer transfer by high temperature hydrogenimplantation and lower temperature layer splittingElectronics Letters, 1998
- Basic mechanisms involved in the Smart-Cut® processMicroelectronic Engineering, 1997
- Fabrication of Single Crystalline SiC Layer on High Temperature GlassJournal of the Electrochemical Society, 1997
- Wafer bonding and H-implantation mechanisms involved in the Smart-cut® technologyMaterials Science and Engineering: B, 1997
- Silicon carbide on insulator formation by the Smart-Cut® processMaterials Science and Engineering: B, 1997
- Silicon carbide on insulator formation using the Smart Cut process [Note 1]Electronics Letters, 1996
- Silicon on insulator material technologyElectronics Letters, 1995