Rapid thermal anneal of hydrogen-implanted metal-silicon nitride-silicon dioxide-silicon structure
- 2 April 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (14) , 1336-1338
- https://doi.org/10.1063/1.103201
Abstract
A post‐implant rapid thermal annealing technique is proposed to achieve very low interface trap density (10/eV cm2) at the SiO2‐Si interface in a metal‐Si3N4‐SiO2‐Si structure. The constitution of a donor layer induced by implanted hydrogen is explained with the aid of a model that predicts the formation of SiH groups. The proposed model is substantiated by comparing the IR data for furnace and rapid thermal annealed samples.Keywords
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