Channeling effects in high energy implantation of N+ in silicon

This publication has 14 references indexed in Scilit:

• Random and channeling stopping power of nitrogen in silicon in the 700–1500 keV range
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
• Boron implants in silicon at tilt angles of O degrees and 7 degrees
  Semiconductor Science and Technology, 1990
• A comparison between zero and seven degrees of tilt implantation of As+, P+ and BF2+
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
• High precision structural measurements on thin epitaxial layers by means of ion-channeling
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
• Channeled implantation with a parallel scanned ion beam
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
• Radiation damage in silicon produced by phosphorus implantation: Random and aligned implants
  Radiation Effects, 1978
• Planar and axial channeling of 800-keV As in 〈110〉 silicon
  Applied Physics Letters, 1976
• Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single Crystals
  Journal of Applied Physics, 1970
• Channeling of medium-mass ions through silicon
  Canadian Journal of Physics, 1968
• The range of heavy ions (0.1–1.5 MeV) in monocrystalline tungsten
  Nuclear Instruments and Methods, 1965