Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
- Vol. 4 (1)
- https://doi.org/10.1557/s1092578300000685
Abstract
The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.Keywords
This publication has 30 references indexed in Scilit:
- InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substratesApplied Physics Letters, 1998
- Luminescence spectra from InGaN multiquantum wells heavily doped with SiApplied Physics Letters, 1998
- Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperatureApplied Physics Letters, 1997
- Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum wellJournal of Applied Physics, 1997
- Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wellsMRS Internet Journal of Nitride Semiconductor Research, 1997
- Radiative recombination lifetime measurements of InGaN single quantum wellApplied Physics Letters, 1996
- Per-carrier nonlinear optical response of [111]-oriented piezoelectric InGaAs/GaAs multiple quantum wellsJournal of Applied Physics, 1996
- Nonlinear optical response, screening, and distribution of strain in piezoelectric multiple quantum wellsJournal of Applied Physics, 1994
- Comparison of optical nonlinearities in piezoelectric strained [111]- and [001]-grown (In,Ga)As/(Al,Ga)As quantum wellsApplied Physics Letters, 1994
- Magnitude, origin, and evolution of piezoelectric optical nonlinearities in strained [111]B InGaAs/GaAs quantum wellsJournal of Applied Physics, 1993