Properties of a high‐mobility two‐dimensional electron gas in modulation‐doped quantum well structures of GaInAs/AIInAs and GaInAs/(Ga1−xAlx)InAs heterostructures
- 1 June 1994
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 183 (2) , 437-453
- https://doi.org/10.1002/pssb.2221830210
Abstract
No abstract availableKeywords
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