Growth of InAsxP1−x/InP multi-quantum well structures by solid source molecular beam epitaxy
- 1 September 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (5) , 3330-3334
- https://doi.org/10.1063/1.360026
Abstract
We report on the growth of high quality pseudomorphic InAsxP1−x/InP single and multi‐quantum well (MQW) structures by solid source molecular beam epitaxy, using valved cracker sources to accurately control the group V ratio. A series of MQW’s grown in a p‐i‐n configuration covering the 1.0–1.30 μm wavelength showed intense narrow room temperature photoluminescence (PL) and extremely narrow 10 K PL linewidths (≤8 meV). Devices fabricated from these structures exhibited low reverse dark currents (xP1−x/InP for optoelectronic devices in this wavelength range.This publication has 21 references indexed in Scilit:
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