Radiation-induced interface traps in hardened MOS transistors: an improved charge-pumping study
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (6) , 2547-2557
- https://doi.org/10.1109/23.556835
Abstract
No abstract availableThis publication has 48 references indexed in Scilit:
- Post-irradiation effects in a rad-hard technologyIEEE Transactions on Nuclear Science, 1996
- Effects of interface traps and border traps on MOS postirradiation annealing responseIEEE Transactions on Nuclear Science, 1995
- Three-level charge pumping study of radiation-induced defects at SiSiO2 interface in submicrometer MOS transistorsJournal of Non-Crystalline Solids, 1995
- Characterization of Si–SiO2 interface states: Comparison between different charge pumping and capacitance techniquesJournal of Applied Physics, 1993
- Generation and transformation of interface traps in MOS structuresMicroelectronic Engineering, 1993
- Observation of near-interface oxide traps with the charge-pumping techniqueIEEE Electron Device Letters, 1992
- Response of interface traps during high-temperature anneals (MOSFETs)IEEE Transactions on Nuclear Science, 1991
- Modeling the anneal of radiation-induced trapped holes in a varying thermal environmentIEEE Transactions on Nuclear Science, 1990
- High-temperature silicon-on-insulator electronics for space nuclear power systems: requirements and feasibilityIEEE Transactions on Nuclear Science, 1988
- Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistorsApplied Physics Letters, 1986