The current understanding of epitaxial CVD silicon layer doping in the light of modelling and theory development (IV). The problem of more‐than‐one kind of dopant species
- 1 July 1987
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 22 (7) , 883-892
- https://doi.org/10.1002/crat.2170220705
Abstract
No abstract availableKeywords
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