The extraction of two-dimensional MOS transistor doping via inverse modeling
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (1) , 17-19
- https://doi.org/10.1109/55.363213
Abstract
We present a novel method for the determination of the two-dimensional (2D) doping profile of a MOSFET using inverse modeling. In our method, the logarithms of the donors and accepters concentrations are each represented by a tensor product spline (TPS). The TPS coefficients are extracted by nonlinear, least squares optimization from source/drain (S/D) diode and gate capacitance data. After validating the method by applying it to simulated capacitance data, we present the results of using the new technique to extract the 2D profile of a 0.42 /spl mu/m gate length CMOS technology N-channel device.Keywords
This publication has 9 references indexed in Scilit:
- Scanning tunneling microscopy on cleaved silicon pn junctionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A novel method for extracting the two-dimensional doping profile of a sub-half micron MOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- MOSFET Two-Dimensional Doping Profile DeterminationPublished by Springer Nature ,1993
- Investigation of the physical modeling of the gate-depletion effectIEEE Transactions on Electron Devices, 1992
- Two-dimensional impurity profiling with emission computed tomography techniquesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- Experimental characterization of two-dimensional dopant profiles in silicon using chemical stainingApplied Physics Letters, 1988
- MINIMOS—A two-dimensional MOS transistor analyzerIEEE Transactions on Electron Devices, 1980
- A Practical Guide to SplinesPublished by Springer Nature ,1978
- The influence of debye length on the C-V measurement of doping profilesIEEE Transactions on Electron Devices, 1971