Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum
- 1 October 2000
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 34 (10) , 1133-1136
- https://doi.org/10.1134/1.1317570
Abstract
The parameters of deep-level centers in lightly doped 4H-SiC epilayers grown by sublimational epitaxy and CVD were investigated. Two deep-level centers with activation energies Ec-0.18 eV and Ec-0.65Keywords
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