Effects of residual impurities on Zn electrical activity in Zn-doped InGaAlP grown by metalorganic chemical vapor deposition
- 1 September 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 123 (1-2) , 181-187
- https://doi.org/10.1016/0022-0248(92)90022-b
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- High-power (106 mW) CW operation of transverse-mode stabilised InGaAlP laser diodes with strained In 0.62 Ga 0.38 P active layerElectronics Letters, 1991
- Effects of substrate misorientation on doping characteristics and band gap energy for InGaAlP crystals grown by metalorganic chemical vapor depositionJournal of Crystal Growth, 1991
- AlGaInP visible laser diodes grown on misoriented substratesIEEE Journal of Quantum Electronics, 1991
- High-efficiency InGaAlP/GaAs visible light-emitting diodesApplied Physics Letters, 1991
- Effects of V/III ratio on Zn electrical activity in Zn-doped InGaA1P grown by metalorganic chemical vapor depositionJournal of Crystal Growth, 1991
- Effect of substrate orientation on Zn-doping of AIGalnP grown by atmospheric pressure orgamometallic vapor phase epitaxyJournal of Electronic Materials, 1990
- Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1989
- Zn doping characteristics for InGaAlP grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1988
- A new approach to the “gettering” of oxygen during the growth of GaAlAs by low pressure MOCVDJournal of Crystal Growth, 1981
- Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPEApplied Physics Letters, 1979