Single event upset (SEU) sensitivity dependence of linear integrated circuits (ICs) on bias conditions
- 1 December 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 44 (6) , 2325-2332
- https://doi.org/10.1109/23.659055
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Observation of heavy ion induced transients in linear circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Single event effects in pulse width modulation controllersIEEE Transactions on Nuclear Science, 1996
- Heavy ion and proton induced single event transients in comparatorsIEEE Transactions on Nuclear Science, 1996
- Single-event effects in analog and mixed-signal integrated circuitsIEEE Transactions on Nuclear Science, 1996
- Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structuresIEEE Transactions on Nuclear Science, 1995
- Observation of single event upsets in analog microcircuitsIEEE Transactions on Nuclear Science, 1993
- Models for Total Dose Degradation of Linear Integrated CircuitsIEEE Transactions on Nuclear Science, 1987
- A Comparison of Radiation Damage in Linear ICs from COBALT-60 Gamma Rays and 2.2 MeV ElectronsIEEE Transactions on Nuclear Science, 1983