The correlation between hydrogen content and electronic properties in a-Si:H
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 57-60
- https://doi.org/10.1016/s0022-3093(05)80056-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si:HJournal of the Physics Society Japan, 1989
- Interface defects in a-Si: H/a-Si3N4: H superlattices as elucidated from photothermal deflection spectroscopy measurementsPhilosophical Magazine Part B, 1989
- Nature of trapped hole centres (A centres) in a-Si:H : Investigation by optically detected magnetic resonance and photoinduced absorption measurements on superlatticesSolid State Communications, 1988
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982