The growth characteristics of chemical vapour-deposited β-SiC on a graphite substrate by the SiCl4/C3H8/H2 system
- 1 May 1995
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 30 (10) , 2675-2681
- https://doi.org/10.1007/bf00362151
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The Effect of Argon Addition on the Microstructure, Texture and Phases of Silicon Carbide Prepared by Chemical Vapor DepositionJournal of the Ceramic Society of Japan, 1991
- Growth of silicon carbide by chemical vapour depositionJournal of Materials Science Letters, 1991
- Morphological aspects of silicon carbide chemically vapour-deposited on graphiteJournal of Materials Science, 1991
- Thermodynamics for the preparation of SiC-C nano-composites by chemical vapour depositionJournal of Materials Science, 1990
- Growth kinetics of silicon carbide CVDJournal of Crystal Growth, 1988
- Growth Characteristics of CVD Beta‐Silicon CarbideJournal of the Electrochemical Society, 1987
- High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor depositionApplied Physics Letters, 1984
- Heteroepitaxial growth of β-SiC on silicon substrate using SiCl4-C3H8-H2 systemJournal of Crystal Growth, 1978
- The structure of chemical vapor deposited silicon carbideThin Solid Films, 1977
- On the formation of β-SiC from pyrolysis of CH3SiCl3 in hydrogenJournal of Crystal Growth, 1972