Growth of silicon-doped dislocation-free gaas crystals by the LEC technique for optical device applications
- 1 March 1986
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (2) , 87-90
- https://doi.org/10.1007/bf02649908
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
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