Observations of dislocations and junction irregularities in bipolar transistors using the OBIC mode of the scanning optical microscope
- 1 November 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (11) , 1189-1194
- https://doi.org/10.1016/0038-1101(86)90063-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A scanning optical microscope for the inspection of semiconductor materials and devicesJournal of Microscopy, 1980
- Comparison of dislocation images obtained using the scanning optical microscope and scanning electron microscopeJournal of Materials Science, 1979
- Effects of dislocations in silicon transistors with implanted emittersSolid-State Electronics, 1979
- Observations of dislocations and junction irregularities in bipolar transistors using the E.B.I.C. mode of the scanning electron microscopeSolid-State Electronics, 1979
- Examination of grain boundaries in polycrystalline solar cells using a scanning optical microscopeElectronics Letters, 1978
- Effects of dislocations in silicon transistors with implanted basesSolid-State Electronics, 1977
- Observation of dislocations in a silicon phototransistor by scanning electron microscopy using the barrier electron voltaic effectSolid-State Electronics, 1976
- Direct observation of electrical faults in planar transistors made in epitaxially grown siliconSolid-State Electronics, 1968
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949