Concentration transient analysis of antimony surface segregation during Si(001) molecular beam epitaxy
- 1 December 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 206 (1-2) , 59-63
- https://doi.org/10.1016/0040-6090(91)90393-c
Abstract
No abstract availableKeywords
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